www.cj-elec.com 1 b , may ,2015 jiangsu changjiang electron ics technology co., ltd 6 2 7 -3l plastic-encap sulate mosfets cjk 3 -channel mosfet v (br )dss r ds(o n) max i d -12v 28m ? @- 4.5 v -6a 32m ? @-3.7v 40m ? @-2.5v 63m ? @-1.8v 150m ? @-1 .5 v marking equivalent circuit absolute maximum ratings (t a =25 unless otherw ise noted) paramete r symbol value unit drain-sourc e voltage v ds -12 v gate-source vo ltage v gs 8 v continuo us drain current i d -6 pulsed drain current (t=300s) i dm -20 a 0.4 w po w er dissipation p d thermal resist ance from junction to ambient r ja 312.5 /w junction temperature t j 150 storage te mperature t stg -55~ + 150 applica t ion ? dc/dc co nv erter ? load switch for port able devices ? battery switch feature ? trenchfet power mosfet e xcellent r ds(on) and low gate charge ? sot -23-3l ga te 2. source 3 . drain 1. solid dot = green molding compound device, if none,the normal device. a
z z z f m h o h f f r p b may 5 0 2 6 ) ( 7 ( / ( & 7 5 , & $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 a t =25 / unless otherwise specified paramete r symbol test condition min typ max unit static characteristics drain-sourc e breakdown voltage v (br)ds s v gs = 0v, i d = -250a -12 v zero gate volt age drain current i dss v ds =-12v,v gs = 0 v -1 a gate-body l eakage current i gss v gs =8v, v ds = 0 v 0.1 a gate threshold voltage (note 1) v gs(t h) v ds =v gs , i d =- 250a -0.4 -1 v v gs =-4.5v, i d =-5a 28 v gs =-3.7v, i d =- 4.6a 32 v gs =-2.5v, i d =- 4.3a 40 v gs =-1.8v, i d =-1a 63 drain-sourc e on-resistance (note 1) r ds(o n) v gs =-1.5v, i d =- 0.5a 150 m? for ward tranconductance (note 1) g fs v ds =-5v, i d =-5 a 18 s dyna mic characteristics (note 2) input capa citance c iss 1275 pf output capa citance c oss 255 pf reverse t ransfer capacitance c rss v ds =-6v,v gs =0 v,f =1mhz 236 pf gate resistance r g f =1mhz 1.9 19 ? to tal gate charge q g 14 21 nc gate-source charg e q gs 2.3 nc gate-drain charge q gd v ds =-6v,v gs =-4.5v,i d =-5a 3.6 nc tu rn-on delay time t d(on) 26 40 ns tu rn-on rise time t r 24 40 ns tu rn-off delay time t d(o ff) 45 70 ns tu rn-off fall time t f v dd =-6v ,v gen =-4.5v,i d =-4a r l =6 ? ,r gen =1 ? 20 35 ns sou rce-drain diode characteristics diode forward current i s t c =25 -1.4 a diode pulsed forward current i sm -20 a diode forward voltage (note 1) v ds v gs =0v, i s =-4a -1.2 v diode reverse recovery time (note 2) t rr 24 48 ns diode reverse recovery charge (note 2) q rr i f =-4a , di/dt=100a/ s 8 16 nc notes : 1. pulse test; pulse width 300 s, duty cycle 2%. 2. guaranteed by design, not subject to production testing.
z z z f m h o h f f r p 3 b may 5 7 \ s l f d o & k d u d f w h u l v w l f v ? -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.01 -0.1 -1 -10 -0 -1 -2 -3 -4 -5 -0 -4 -8 -12 -1 6 -20 -1 -2 -3 -4 -5 -6 -7 -8 10 20 30 40 50 60 70 -0 -1 -2 -3 -4 -5 -6 0 10 20 30 40 50 60 70 80 90 100 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -0 -4 -8 -12 -16 -20 25 50 75 100 125 -0.0 -0 .2 -0.4 -0.6 -0.8 -1.0 t a =100 v sd i s ? ? t a =25 source current i s (a) source to drain voltage v sd (v) v gs = -5v -4v -3v -2.5 v -2v ou tput characteristics v gs =-1.5v drain current i d (a) drain to source voltage v ds (v) vgs=- 3.7v,-4.5v vgs=- 2.5v t a =25 pulsed on -resistance r ds( on) (m ? ) drain current i d (a) i d ?? r ds(o n) vgs=- 1.5v vgs=- 1.8v t a =25 t a =100 i d =-5a on -resistance r ds( on) (m ? ) gate to source voltage v gs (v) v gs ?? r ds(o n) v ds =-3v drain current i d (a) gate to source voltage v gs (v) t r an sf er c haract eristics t a =100 t a =25 i d =-250ua thr eshold voltage thresho ld voltage v th (v) junction temperature t j ( )
4 bmay5 -3l -3l min. ma x. min. max. a 1.050 1.250 0.041 0.049 a1 0.000 0.100 0.000 0.004 a2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 d 2.820 3.020 0.111 0.119 e1 1.500 1.700 0.059 0.067 e 2.650 2.950 0.104 0.116 e e1 1.800 2.000 0.071 0.079 l 0.300 0.600 0.012 0.024 0 8 0 8 symbol dimensions in millimeters dimensions in inches 0.950(bsc) 0.037(bsc)
sot-23-3l tape and reel www.cj-elec.com 5 b , may ,2015
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